2SA1411

SMD S MD Type Silicon PNP Epitaxia 2SA1411 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors IC Features Very high DC current gain:hFE=500 to 1600. High VEBO Voltage:VEBO=-10V +0.1 2.4-0.1 Unit: mm +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation at 25 ambient temperature Tj Tstg 150 -55 to +150 Symbol VCBO VCEO VEBO IC PT Rating -25 -25 -10 -150 200 Unit V V V mA mW Junction temperature Storage temperature Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter cutoff current DC current gain * Base-emitter voltage * Collector-emitter saturation voltage * Base-emitter saturation voltage * Gain bandwidth product Output capacitance Turn-on time Storage time Turn-off time * PW 350ìs,duty cycle 2% Symbol ICBO IEBO hFE VBE Testconditons VCB = -25 V, IE = 0 VEB = -7 V, IC = 0 VCE = -5 V, IC = -1 mA VCE = -5 V, IC = -1 mA 500 1000 -580 -0.15 -0.8 200 4.6 0.12 0.58 0.75 -0.3 -1.2 Min Typ Max -100 -100 1600 mV V V MHz pF ns ns ns Unit nA nA VCE(sat) IC = -50mA , IB = -5mA VBE(sat) IC = -50mA , IB = -5mA fT Cob ton tstg toff VCE = -5V , IE = 10mA VCB = -5V , IE = 0 , f = 1.0MHz VCC = -10V , VBE(off) = 2.7V , IC = -50mA , IB1 = -IB2 = -1mA hFE Classification Marking hFE M15 500 1000 M16 800 1600 +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1