2SA1415

S MD Type High-Voltage Switching Applications 2SA1415 Transistors Features Adoption of FBET Process High Breakdown Voltage (VCEO = 160V) Excellent Linearlity of hFE and Small Cob Fast Switching Speed Absolute Maximum Ratings Ta = 25 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Current (Pulse) Collector Power Dissipation Jumction temperature Storage temperature Range * Mounted on ceramic board (250 mm2 x 0.8 mm) Symbol VCBO VCEO VEBO IC ICP PC PC * Tj Tstg Rating -180 -160 -5 -140 -200 500 1.3 150 -55 to +150 Unit V V V mA mA mW W Electrical Characteristics Ta = 25 Parameter Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Gain-Bandwidth Product Collector Output Capacitance Turn-On Time Storage Time Fall Time Symbol ICBO IEBO hFE Testconditons VCB = -80V , IE = 0 VEB = -4V , IC = 0 VCE = -5V , IC = -10mA 100 -0.14 150 4 0.1 See Test Circuit. 1.5 0.1 ìs Min Typ Max -100 -100 400 -0.4 V MHz pF Unit nA nA VCE(sat) IC = -50mA , IB = -5mA fT Cob ton tstg tf VCE = -10V , IC = -10mA VCB = -10V , IE = 0 , f = 1MHz www.kexin.com.cn 1 SMD Type 2SA1415 Test Circuit Transistors hFE Classification Marking Rank hFE 100 R 200 140 AA S 280 200 T 400 Electrical Characteristics Curves 2 www.kexin.com.cn SMD Type 2SA1415 Transistors www.kexin.com.cn 3