2SA1455K

S MD Type Transistors Epitaxial Planar PNP Silicon Transistor 2SA1455K SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Unit: mm +0.1 2.4-0.1 High breakdown voltage:VCEO=-120V Low noise design:NF=0.2dB(Typ.) +0.1 1.3-0.1 Features 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating -120 -120 -5 -50 200 150 -55 to +150 Unit V V V mA mW Electrical Characteristics Ta = 25 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Collector-emitter saturation voltage Output capacitance Transition frequency Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE IC=-50ìA IC=-1mA IE=-50ìA VCB=-100V VEB=-4V VCE=-6V, IC=-2mA 180 Testconditons Min -120 -120 -5 -0.5 -0.5 820 -0.5 140 3.2 V MHz pF Typ Max Unit V V V ìA ìA VCE(sat) IC=-10mA, IB=-1mA fT Cob VCE=-12V, IE= 2mA, f=30MHz VCB=-12V, IE=0A, f=1MHz hFE Classification Marking Rank hFE R 180 390 G S 270 560 E 390 820 +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1