2SA1462

SMD S MD Type PNP Silicon Epitaxia Transistor 2SA1462 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors IC Unit: mm Features +0.1 2.4-0.1 High speed,high voltage switching. High ft:fT=1800MHz TYP. Low Cob:Cob=2.0pF TYP. +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector to base voltage Collecto to emitter voltage Emitter to base voltage Collector current Total power dissipation TA=25 Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PT Tj Tstg Rating -15 -15 -4.5 -50 200 150 -55 to +150 Unit V V V mA mW Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter cutoff current DC current gain * Collector-emitter saturation voltage Base-emitter saturation voltage Gain bandwidth product Output capacitance Turnput Capacitance Storage Time Turn-off Time * Pulse test: tp 350 ìs; Duty Cycle 2% Symbol ICES IEBO hFE Testconditons VCE = -8.0V, RBE=0 VEB = -3.0V, IC=0 VCE = -1.0V , IC = -10mA VCE = -1.0V , IC = -1mA VCE(sat) IC = -10mA , IB = -1.0mA VBE(sat) IC = -10mA , IB = -1.0mA fT Cob ton tstg toff IC = -10mA , IB1 = IB1 = -1.0mA VCE = -10V , IE = 10mA VCB = -5.0V , IE = 0 , f = 1.0MHz 800 50 30 80 70 -0.09 -0.20 -0.98 -0.95 1800 2.0 9.0 16 19 3.0 20 40 40 V V MHz pF ns ns ns Min Typ Max -100 -100 150 Unit nA nA hFE Classification Marking hFE Y33 50 100 Y34 75 150 +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1