2SA1463

SMD S MD Type PNP Silicon Epitaxia 2SA1463 Transistors IC Features High speed,high voltage switching. Low Collector Saturation Voltage Absolute Maximum Ratings Ta = 25 Parameter Collector to base voltage Collecto to emitter voltage Emitter to base voltage Collector current(DC) Collector current(Pulse)* Total power dissipation Junction temperature Storage temperature *.pw 10 ms,Duty Cycle 50% Symbol VCBO VCEO VEBO IC IC PT Tj Tstg Rating -60 -45 -5.0 -1.0 -2.0 20 150 -55 to +150 Unit V V V A A W Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter cutoff current DC current gain * Collector-emitter saturation voltage * Base-emitter saturation voltage * Gain bandwidth product Output capacitance Turn-on time Storage time Turn-off time * Pulse test: tp 350 ìs; d 0.02. Symbol ICES IEBO hFE1 hFE2 Testconditons VCE = -45V, RBE=0 VEB = -4V, IC=0 VCE = -10V , IC = -50mA VCE = -10V , IC = -500mA 60 60 -0.26 -0.98 300 400 11 25 IC = -500mA , IB1 = IB1 = -50mA 46 62 25 40 70 100 -0.6 -1.2 V V MHz pF ns ns ns Min Typ Max -0.5 -0.5 200 Unit ìA ìA VCE(sat) IC = -500mA , IB = -50mA VBE(sat) IC = -500mA , IB = -50mA fT Cob ton tstg toff VCE = -10V , IE = 100mA VCB = -10V , IE = 0 , f = 1.0MHz hFE Classification Marking hFE 1L 60 120 1K 100 200 www.kexin.com.cn 1