2SA1464

SMD S MD Type PNP Silicon Epitaxia 2SA1464 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors IC Unit: mm Features +0.1 2.4-0.1 High fT: fT=400MHz. +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Maximum Total power dissipation at 25 ambient temperature Tj Tstg 150 -55 to +150 Symbol VCBO VCEO VEBO IC PT Rating -60 -40 -5 -500 200 Unit V V V mA mW Maximum Junction temperature Maximum Storage temperature Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter cutoff current DC current gain * Collector-emitter saturation voltage * Base-emitter saturation voltage * Gain bandwidth product Output capacitance Turn-on time Storage time Turn-off time *. PW 350ìs,duty cycle 2% Symbol ICBO IEBO hFE Testconditons VCB = -40V, IE=0 VEB = -4V, IC=0 VCE = -2V , IC = -150mA VCE = -2V , IC = -500mA VCE(sat) IC = -500mA , IB = -50mA VBE(sat) IC = -500mA , IB = -50mA fT Cob ton tstg toff VCE = -10V , IE = 20mA VCB = -10V , IE = 0 , f = 1.0MHz VCC = -30V , IC = 150mA , IB1 = -IB2 = 15mA 150 75 20 140 50 -0.45 -0.75 -1 400 5 8 35 225 255 -1.3 V V MHz pF ns ns ns Min Typ Max -100 -100 300 Unit nA nA hFE Classification Marking hFE Y12 75 150 Y13 100 200 Y14 150 300 +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1