2SA1484

SMD S MD Type Silicon PNP Epitaxial 2SA1484 SOT-23 Transistors IC Unit: mm Features 3 +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 2.4-0.1 +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating -90 -90 -5 -100 150 150 -55 to +150 Unit V V V mA mW Electrical Characteristics Ta = 25 Parameter Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage * Pulse test. Symbol Testconditons Min -90 -90 -5 -0.1 -0.1 250 800 -0.15 -1 V V Typ Max Unit V V V ìA ìA V(BR)CBO IC = -10 ìA, IE = 0 V(BR)CEO IC = -1 mA, RBE = V(BR)EBO IE = -10 ìA, IC = 0 ICBO IEBO hFE VCB = -70 V, IE = 0 VEB = -2 V, IC = 0 VCE = -12 V, IC = -2 mA ( * ) VCE(sat) IC = -10 mA, IB = -1 mA ( * ) VBE(sat) IC = -10 mA, IB = -1 mA ( * ) hFE Classification Marking hFE IRD 250 500 IRE 400 800 +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1