2SA1531A

S MD Type Silicon PNP Epitaxial Planar Type 2SA1531A Transistors Features Low noise voltage NV. High forward current transfer ratio hFE. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating -55 -55 -5 -50 -100 150 150 -55 to +150 Unit V V V mA mA mW Electrical Characteristics Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Base-emitter voltage Collector-base cutoff current Collector-emitter cutoff current Forward current transfer ratio Collector-emitter saturation voltage Transition frequency Noise voltage Symbol VCBO VCEO VEBO VBE ICBO ICEO hFE Testconditons IC = -10 ìA, IE = 0 IC = -2 mA, IB = 0 IE = -10 ìA, IC = 0 VCE = -1 V, IC = -100 mA VCB = -10 V, IE = 0 VCE = -10 V, IB = 0 VCE = -5 V, IC = -2 mA 180 Min -55 -55 -5 -0.7 -1 -0.1 -1 700 -0.6 150 150 V MHz mV Typ Max Unit V V V V ìA ìA VCE(sat) IC = -100 mA, IB = -10 mA fT Cob VCB = -5 V, IE = 2 mA, f = 200 MHz VCE = -10 V, IC = -1 mA, GV = 80 dB, Rg = 100 k? , Function = FLAT hFE Classification Marking Rank hFE R 180 360 H S 260 520 T 360 700 www.kexin.com.cn 1