2SA1576

S MD Type PNP silicon Transistor 2SA1576 Transistors Features Low noise:NF=0.5dB(TYP.) Epitaxial planar type. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating -50 -40 -5 -100 200 125 -55 to +125 Unit V V V A W Electrical Characteristics Ta = 25 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance Symbol BVCBO BVCEO BVEBO ICBO IEBO IC=-50ìA IC=-1mA IE=-50ìA VCB=-30V VEB=-4V Testconditons Min -50 -40 -5 -0.5 -0.5 -0.5 120 140 3.5 560 MHz pF Typ Max Unit V V V ìA ìA V VCE(sat) IC/IB=-50mA/-5mA hFE fT Cob VCE=-6V, IC=-1mA VCE=-12V, IE=2mA VCB=-12V, IE=0A, f=1MHz hFE Classification Marking hFE Q 120 270 R 180 390 S 270 560 www.kexin.com.cn 1