2SA1576A

S MD Type General Purpose Transistor 2SA1576A Transistors Features Excellent hFE linearity. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating -60 -50 -6 -0.15 0.2 150 -55 to +150 Unit V V V A W Electrical Characteristics Ta = 25 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance Symbol BVCBO BVCEO BVEBO ICBO IEBO IC=-50ìA IC=-1mA IE=-50ìA VCB=-60V VEB=-6V Testconditons Min -60 -50 -6 -0.1 -0.1 -0.5 120 140 4.0 5.0 560 MHz pF Typ Max Unit V V V ìA ìA V VCE(sat) IC/IB=-50mA/-5mA hFE fT Cob VCE=-6V, IC=-1mA VCE=-12V, IE=2mA, f=30MHz VCB=-12V, IE=0A, f=1MHz hFE Classification Marking hFE FQ 120 270 FR 180 390 FS 270 560 www.kexin.com.cn 1