2SA1579

S MD Type High-Voltage Amplifier Transistor 2SA1579 Transistors Features High breakdown voltage. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating -120 -120 -5 -50 0.2 150 -55 to +150 Unit V V V mA W Electrical Characteristics Ta = 25 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Output capacitance Transition frequency Symbol BVCBO BVCEO BVEBO ICBO IEBO IC=-50ìA IC=-1mA IE=-50ìA VCB=-100V VEB=-4V Testconditons Min -120 -120 -5 -0.5 -0.5 -0.5 180 140 3.2 560 MHz pF Typ Max Unit V V V ìA ìA V VCE(sat) IC=-10mA, IB=-1mA hFE fT Cob VCE=-6V, IC=-2mA VCE=-12V, IE= 2mA, f=100MHz VCB=-12V, IE=0A, f=1MHz hFE Classification Marking Rank hFE RR R 180 390 RS S 270 560 www.kexin.com.cn 1