2SA1580

SMD S MD Type Transistors IC PNP Epitaxial Planar Silicon Transistor 2SA1580 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 High fT. +0.1 2.4-0.1 Small reverse transfer capacitance. Adoption of FBET process. +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 Features 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse) Collector dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC Icp PC Tj Tstg Rating -70 -60 -4 -50 -100 200 150 -55 to +150 Unit V V V mA mA mW Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter cutoff current DC current gain Gain bandwidth product Base-collector time constant Output capacitance Reverse transfer capacitance Collector-emitter saturation voltage Base-emitter saturation voltage Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Symbol ICBO IEBO hFE fT rbb,cc Cob Cre Testconditons VCB = -40V, IE=0 VEB = -3V, IC=0 VCE = -10V , IC = -10mA VCE = -10V , IC = -10mA VCE = -10V , IC = -10mA VCB = -10V , f = 1.0MHz VCB = -10V , f = 1.0MHz 60 350 700 8 1.7 1.3 -0.6 -1 -70 -60 -4 Min Typ Max -0.1 -1 270 MHz ps pF pF V V V V V Unit ìA ìA VCE(sat) IC = -20mA , IB = -2mA VBE(sat) IC = -20mA , IB = -2mA V(BR)CBO IC = -10ìA , IE = 0 V(BR)CEO IC = -1mA , RBE = V(BR)EBO IE = -10ìA , IC = 0 hFE Classification Marking Rank hFE 60 3 120 90 QL 4 180 135 5 270 +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1