2SA1586

SMD S MD Type Silicon PNP Epitaxial 2SA1586 Transistors IC Features High voltage and high current. Excellent hFE linearity. High hFE. Low noise. Small package. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating -50 -50 -5 -150 -30 100 125 -55 to +125 Unit V V V mA mA mW Electrical Characteristics Ta = 25 Parameter Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Collector output capacitance Noise figure Symbol ICBO IEBO hFE VCB=-50V, IE=0 VEB=-5V, IC=0 VCE=-6V, IC=-2mA 70 -0.1 80 4 1.0 7 10 Min Typ Max -0.1 -0.1 400 -0.3 V MHz pF dB Unit ìA ìA VCE (sat) IC=-100mA, IB=-10mA fT Cob NF VCE=-10V, IC=-1mA VCB=-10V, IE=0, f=1MHz VCE=-6V, IC=-0.1mA, f=1kHz, Rg=10kÙ hFE Classification Marking hFE SO 70 140 SY 120 240 SG 200 400 www.kexin.com.cn 1