2SA1607

SMD S MD Type Transistors IC PNP Epitaxial Planar Silicon Transistors 2SA1607 SOT-23 Unit: mm Features Fast switching speed. +0.1 2.4-0.1 +0.1 2.9-0.1 +0.1 0.4-0.1 Low saturation voltage. 1 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.1 1.3-0.1 High gain-bandwidth product. 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse) Base current Collector dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Rating -40 -20 -5 -150 -300 -30 200 150 -55 to +150 Unit V V V mA mA mA mW +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1 SMD Type 2SA1607 Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter cutoff current DC current gain Gain bandwidth product Output capacitance Collector-emitter saturation voltage Base-emitter saturation voltage Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Delay time Rise time Storage time Fall time Symbol ICBO IEBO hFE fT Cob Testconditons VCB = -30V, IE=0 VEB = -4V, IC=0 VCE = -1V , IC = -10mA VCE = -10V , IC = -10mA VCB = -10V , f = 1.0MHz Transistors IC Min Typ Max -0.1 -0.1 Unit ìA ìA 60 400 2.9 -0.07 -0.75 -40 -20 -5 14 11 80 16 180 MHz pF -0.2 -1 V V V V V 20 20 180 25 ns ns ns ns VCE(sat) IC = -10mA , IB = -1mA VBE(sat) IC = -10mA , IB = -1mA V(BR)CBO IC = -10ìA , IE = 0 V(BR)CEO IC = -1mA , RBE = V(BR)EBO IE = -10ìA , IC = 0 td tr tstg tf hFE Classification Marking Rank hFE 60 3 120 90 YL 4 180 2 www.kexin.com.cn