2SA1611

SMD S MD Type PNP Silicon Epitaxia 2SA1611 Transistors IC Features High DC Current Gain. High Voltage. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PT Tj Tstg Rating -60 -50 -5 -100 150 150 -55 to +150 Unit V V V mA mW Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter cutoff current DC current gain * Collector-emitter saturation voltage Base-emitter voltage Gain bandwidth product Output capacitance * Pulse test: tp 300 ìs; d 0.02. Symbol ICBO IEBO hFE Testconditons VCB = -60V, IE=0 VEB = -5V, IC=0 VCE = -6V , IC = -1mA 90 200 -0.18 Min Typ Max -0.1 -0.1 600 -0.3 V V MHz pF Unit ìA ìA VCE(sat) IC = -100mA , IB = -10mA VBE fT Cob VCE = -6V , IC = 1mA VCE = -6V , IE = 10mA VCB = -10V , IE = 0 , f = 1.0MHz -0.58 -0.62 -0.68 180 4.5 hFE Classification Marking hFE M4 90 180 M5 135 270 M6 200 400 M7 300 600 www.kexin.com.cn 1