2SA1612

S MD Type PNP Silicon Epitaxial Transistor 2SA1612 Transistors Features High DC current gain 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) Total power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC PT Tj Tstg Rating -120 -120 -5 -50 150 150 -55 to +150 Unit V V V mA mW Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter cutoff current DC current gain Collector-emitter saturation voltage * Base-emitter voltage Gain bandwidth product Output capacitance *. PW 350ìs,duty cycle 2% Symbol ICBO IEBO hFE Testconditons VCB = -120V, IE=0 VEB = -5V, IC=0 VCE = -6V , IC = -1mA VCE = -6V , IC = -0.1mA * VCE(sat) IC = -10mA , IB = -1mA VBE fT Cob VCE = -6V , IC = -1mA VCE = -6V , IE = -1mA VCB = -30V , IE = 0 , f = 1.0MHz 135 100 500 500 -0.09 -0.3 V V MHz 3 pF Min Typ Max -50 -50 900 Unit nA nA -0.55 -0.61 -0.65 50 90 2 hFE Classification Marking hFE C15 135 270 C16 200 400 C17 300 600 C18 450 900 www.kexin.com.cn 1