2SA1617

SMD S MD Type Silicon PNP Epitaxial 2SA1617 SOT-23 Transistors IC Unit: mm Features 3 +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 2.4-0.1 +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating -55 -50 -5 -100 150 150 -55 to +150 Unit V V V mA mW Electrical Characteristics Ta = 25 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current DC current gain Collector-emitter saturation voltage Base-emitter voltage Symbol Testconditons Min -55 -50 -5 -0.5 -0.5 100 320 -0.2 -0.8 V V Typ Max Unit V V V ìA ìA V(BR)CBO IC = -10ìA , IE = 0 V(BR)CEO IC = -1mA , RBE = V(BR)EBO IE = -10ìA , IC = 0 ICBO IEBO hFE VCB = -30V, IE=0 VEB = -2V, IC=0 VCE = -12V , IC = -2mA VCE(sat) IC = -10mA , IB = -1mA VBE VCE = -12V , IC = -2mA hFE Classification Marking Rank hFE B 100 200 VI C 160 320 +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1