2SA1669

SMD S MD Type Transistors IC PNP Epitaxial Planar Silicon Transistors 2SA1669 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Unit: mm Features +0.1 2.4-0.1 High cutoff frequency : fT=3.0GHz typ. High power gain : MAG=11dB typ (f=0.9GHz) Small noise figure: NF=2.0dB typ (f=0.9GHz) +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector dissipation Jumction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating -20 -15 -3 -50 250 150 -55 to +150 Unit V V V mA mW Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter cutoff current DC current Gain Gain bandwidth product Output Capacitance Reverse transfer capacitance Forward Transfer Gain Maximum Available Power Gain Noise Figure Symbol IcBO IEBO hFE fT Cob Cre Testconditons VCB = -15V , IE = 0 VEB = -2V , IC = 0 VCE = -10V , IC = -5mA VCE = -10V , IC = -5mA VCB = -10V , f = 1MHz VCB = -10V , f = 1MHz 5.0 11 2.0 15 1.5 3.0 1.0 0.7 1.5 MHz pF pF dB dB dB Min Typ Max -0.1 -0.1 Unit ìA ìA |S21e|2 VCE=-10V,IC=-5mA,f=0.9GHz MAG NF VCE=-10V,IC=-5mA,f=0.9GHz VCE=-10V,IC=-3mA,f=0.9GHz Marking Marking DB +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1