2SA1682

S MD Type Transistors PNP Epitaxial Planar Silicon Transistor 2SA1682 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Unit: mm Features +0.1 2.4-0.1 Small reverse transfer capacitance and excellent high 1 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.1 1.3-0.1 High breakdown voltage. frequency chacateristic (Cre : 1.5pF typ). 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse) Collector dissipation Jumction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating -300 -300 -5 -50 -100 250 150 -55 to +150 Unit V V V mA mA mW +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1 SMD Type 2SA1682 Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter cutoff current DC current gain Gain bandwidth product Collector-emitter saturation voltage Base-emitter saturation voltage Collector-to-base breakdown voltage Collector-to-emitter breakdown voltage Emitter-base breakdown voltage Output capacitance Reverse transfer capacitance DC current gain ratio Symbol IcBO IEBO hFE 1 hFE 2 fT Testconditons VCB = -200V , IE = 0 VEB = -4V , IC = 0 VCE = -6V , IC = -0.1 mA VCE = -6V , IC = -1 mA VCE = -30V , IC = -10 mA 100 100 Min Transistors Typ Max -0.1 -0.1 320 Unit ìA ìA 70 -1.0 -1.0 -300 -300 -5 2.4 1.5 1.0 MHz V V V V V pF pF VCE(sat) IC = -10mA , IB = -3mA VBE(sat) IC = -10mA , IB = -3mA V(BR)CBO IC = -10ìA , IE = 0 V(BR)CEO IC = -1mA , RBE = V(BR)EBO IE = -10ìA , IC = 0 Cob Cre hFE ratio VCB = -30V , f = 1MHz VCB = -30V , f = 1MHz hFE1/ hFE2 hFE Classification Marking Rank hFE 4 100 200 CS 5 160 320 2 www.kexin.com.cn