2SA1685

SMD S MD Type Transistors IC PNP Epitaxial Planar Silicon Transistors 2SA1685 Features Fast switching speed. High gain-bandwidth product. Low saturation voltage. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse) Base current Collector dissipation Jumction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Rating -40 -20 -5 -150 -300 -30 150 150 -55 to +150 Unit V V V mA mA mA mW www.kexin.com.cn 1 SMD Type 2SA1685 Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter cutoff current DC current Gain Gain bandwidth product Common base output capacitance Collector-to-emitter saturation voltage Base-to-emitter saturation voltage Collector-to-base breakdown voltage Collector-to-emitter breakdown voltage Emitter-to-base breakdown voltage Delay time Rise time Storage time Fall time Symbol IcBO IEBO hFE fT Cob Testconditons VCB = -30V , IE = 0 VEB = -4V , IC = 0 VCE = -1V , IC = -10mA VCE = -10V , IC = -10mA VCB = -10V , f = 1MHz Transistors IC Min Typ Max -0.1 -0.1 Unit ìA ìA 60 400 2.9 -0.07 -0.75 -40 -20 -5 14 11 80 16 270 MHz pF -0.2 -1 V V V V V 20 20 180 25 ns ns ns ns VCE(sat) IC = -10mA , IB =-1mA VBE(sat) IC = -10mA , IB =-1mA V(BR)CBO IC = -10ìA , IE = 0 V(BR)CEO IC = -1mA , RBE = V(BR)EBO IE = -10ìA , IC = 0 td tr ts tf hFE Classification Marking Rank hFE 3 60 120 YL 4 90 180 2 www.kexin.com.cn