2SA1687

SMD S MD Type Transistors IC PNP Epitaxial Planar Silicon Transistors 2SA1687 Features Very small-sized package. High VEBO. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current Base current Collector dissipation Jumction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Rating -60 -50 -15 -150 -300 -30 150 150 -55 to +150 Unit V V V A A mA mW www.kexin.com.cn 1 SMD Type 2SA1687 Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter cutoff current DC current Gain Gain bandwidth product Collector-to-emitter saturation voltage Base-to-emitter saturation voltage Collector-to-base breakdown voltage Collector-to-emitter breakdown voltage Emitter-to-base breakdown voltage Common base output capacitance Delay time Symbol IcBO IEBO hFE fT Testconditons VCB = -40V , IE = 0 VEB = -120V , IC = 0 VCE = -6V , IC = -1mA VCE = -6V , IC = -1mA Transistors IC Min Typ Max -0.1 -0.1 Unit ìA ìA 135 130 -0.25 -0.85 -60 -50 -15 3.5 50 600 MHz -0.5 -1.2 V V V V V pF ns VCE(sat) IC = -50mA , IB =-5mA VBE(sat) IC = -50mA , IB =-5mA V(BR)CBO IC = -10ìA , IE = 0 V(BR)CEO IC = -1mA , RBE = V(BR)EBO IE = -10ìA , IC = 0 Cob ton VCB = -6V , f = 1MHz Storage time tstg 460 ns Fall time tf 60 ns hFE Classification Marking Rank hFE 5 60 120 D 6 90 180 7 135 270 2 www.kexin.com.cn