2SA1730

SMD S MD Type PNP Epitaxial Planar Silicon 2SA1730 Transistors IC Features Adoption of FBET , MBIT processes. Large current capacity. Low collector-to-emitter saturation voltage. Fast switching speed. Small-sized package. Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse) Collector dissipation * Jumction temperature Storage temperature * Mounted on ceramic board (250mm2 X 0.8mm). Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating -50 -40 -5 -3 -6 1.5 150 -55 to +150 Unit V V V A A W www.kexin.com.cn 1 SMD Type 2SA1730 Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter cutoff current DC current Gain Gain bandwidth product Common base output capacitance Collector-to-emitter saturation voltage Base-to-emitter saturation voltage Collector-to-base breakdown voltage Collector-to-emitter breakdown voltage Emitter-to-base breakdown voltage Turn-on time Symbol IcBO IEBO hFE fT Cob VCE(sat) VBE(sat) Testconditons VCB = -40V , IE = 0 VEB = -3V , IC = 0 VCE = -2V , IC = -500mA VCE = -2V , IC = -500mA VCB = -10V , f = 1MHz IC = -1.5A , IB =-75mA IC = -1.5A , IB =-75mA Transistors IC Min Typ Max -1 -1 Unit ìA ìA 70 300 35 -0.3 -0.95 -50 -40 -5 50 280 MHz pF -0.8 -1.3 V V V V V 100 ns V(BR)CBO IC = -10ìA , IE = 0 V(BR)CEO IC = -1mA , RBE = V(BR)EBO IE = -10ìA , IC = 0 ton Storage time tstg 120 220 ns Turn-off time toff 150 300 ns hFE Classification Marking Rank hFE Q 70 140 AH R 100 200 S 140 280 2 www.kexin.com.cn