2SA1734

SMD S MD Type Silicon PNP Epitaxial 2SA1734 Transistors IC Features Low saturation voltage: VCE(sat) = -0.5 V (max) (IC = -700 mA). High speed switching time: tstg = 0.2ìs (typ.). Small flat package. PC = 1.0 to 2.0 W (mounted on ceramic substrate). Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range * Mounted on ceramic substrate (250 mm X 0.8 t) 2 Symbol VCBO VCEO VEBO IC IB PC PC * Tj Tstg Rating -40 -30 -6 -2 -1.2 500 1000 150 -55 to +150 Unit V V V A A mW www.kexin.com.cn 1 SMD Type 2SA1734 Electrical Characteristics Ta = 25 Parameter Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance Turn-on time Symbol ICBO IEBO Testconditons VCB = -40 V, IE = 0 VEB = -6 V, IC = 0 Transistors IC Min Typ Max -0.1 -0.1 Unit ìA ìA V V(BR)CEO IC = -10 mA, IB = 0 hFE VCE = -2 V, IC =-100 mA VCE = -2 V, IC = -1.0A VCE (sat) IC = -700 mA, IB = -35 mA VBE (sat) IC = -700 mA, IB = -35 mA fT Cob ton VCE = -2 V, IC = -100 mA VCB = -10 V, IE = 0, f = 1 MHz -50 120 40 -0.5 -1.2 100 16 0.1 400 V V MHz pF ìs Storage time tstg 0.2 ìs Fall time tf 0.1 ìs Marking Marking LB 2 www.kexin.com.cn