S MD Type
Power Switching Applications 2SA1736
Transistors
Features
Low Saturation Voltage: VCE(sat) = -0.5V (max) (IC = -1.5A) High Speed Switching Time: tstg = 0.2ìs(typ.) Small Flat Package PC = 1 to 2W (mounted on ceramic substrate) Complementary to 2SC4541
Absolute Maximum Ratings Ta = 25
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Jumction temperature Storage temperature Range * Mounted on ceramic substrate (250 mm x 0.8 t)
2
Symbol VCBO VCEO VEBO IC IB PC PC * Tj Tstg
Rating -60 -50 -6 -3 -0.6 500 1000 150 -55 to +150
Unit V V V A A mW
Electrical Characteristics Ta = 25
Parameter Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Transition Frequency Collector Output Capacitance Turn-On Time Storage Time Fall Time Symbol ICBO IEBO Testconditons VCB = -60V , IE = 0 VEB = -6V , IC = 0 -50 120 40 -0.5 -1.2 100 32 0.1 See Test Circuit. 0.2 0.1 ìs V V MHz pF 400 Min Typ Max -0.1 -0.1 Unit ìA ìA V
V(BR)CEO IC = -10mA , IB = 0 hFE VCE = -2V , IC = -100mA VCE = -2V , IC = -2A VCE(sat) IC = -1.5A , IB = -75mA VBE(sat) IC = -1.5A , IB = -75mA fT Cob ton tstg tf VCE = -2V , IC = -100mA VCB = -10V , IE = 0 , f = 1MHz
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SMD Type
2SA1736
Test Circuit
Transistors
Marking
Marking LD
Electrical Characteristics Curves
2
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S MD Type
2SA1736
Transistors
www.kexin.com.cn
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