2SA1738

SMD S MD Type Silicon PNP Epitaxial Planar Type 2SA1738 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors IC Unit: mm +0.1 2.4-0.1 Features High-speed switch Low collector to emitter saturation voltage VCE(sat). Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing. +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating -15 -15 -4 -50 -100 200 150 -55 to +150 Unit V V V mA mA mW +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1 SMD Type 2SA1738 Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter cutoff current Forward current transfer ratio Collector-emitter saturation voltage Transition frequency Collector output capacitance Turn-on time Turn-off time Storage time Symbol ICBO IEBO hFE Testconditons VCB = -8 V, IE = 0 VCE = -3 V, IC = 0 VCE = -1 V, IC = -10 mA VCE = -1 V, IC = -1 mA VCE(sat) IC = -10 mA, IB = -1 mA fT Cob ton toff tstg Note 1 VCB = -10 V, IE = 10 mA, f = 200 MHz VCB = -5 V, IE = 0, f = 1 MHz 800 50 30 Min Transistors IC Typ Max -0.1 -0.1 150 Unit ìA ìA -0.1 1500 1 12 20 19 -0.2 V MHz pF ns ns ns Note 1: hFE Classification Marking Rank hFE Q 50 120 AK R 90 150 2 www.kexin.com.cn