2SA1745

SMD S MD Type Transistors IC PNP Epitaxial Planar Silicon Transistors 2SA1745 Features Very small-sized package. Low collector-to-emitter saturation voltage. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse) Collector dissipation Jumction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating -20 -15 -5 -500 -1 150 150 -55 to +150 Unit V V V mA A mW Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter cutoff current DC current Gain Gain bandwidth product Common base output capacitance Collector-to-emitter saturation voltage Base-to-emitter saturation voltage Collector-to-base breakdown voltage Collector-to-emitter breakdown voltage Emitter-to-base breakdown voltage Symbol IcBO IEBO hFE fT Cob VCE(sat) Testconditons VCB = -15V , IE = 0 VEB = -4V , IC = 0 VCE = -2V , IC = -10mA VCE = -2V , IC = -50mA VCB = -10V , f = 1MHz IC = -5mA , IB =-0.5mA IC = -200mA , IB =-10mA VBE(sat) IC = -200mA , IB =-10mA V(BR)CBO IC = -10ìA , IE = 0 V(BR)CEO IC = -1mA , RBE = V(BR)EBO IE = -10ìA , IC = 0 -20 -15 -5 135 400 6.5 -15 -200 -0.95 -35 -360 -1.2 Min Typ Max -0.1 -0.1 600 MHz pF mV mV V V V V Unit nA nA hFE Classification Marking Rank hFE 5 135 270 ES 6 200 400 7 300 600 www.kexin.com.cn 1