2SA1759

S MD Type High-Voltage Switching Transistor 2SA1759 Transistors Features High breakdown voltage Low saturation voltage High switching speed Absolute Maximum Ratings Ta = 25 Parameter Collector-emitter Voltage Collector-base Voltage Emitter-base Voltage Collector current Collector current (pulse) *1 Collector power dissipation Jumction temperature Storage temperature * Pw=100ms *2 When mounted on a 40X40X0.7 mm ceramic board Symbol VCEO VCBO VEBO IC ICP PC Tj Tstg Rating -400 -400 -7 -0.1 -0.2 0.5 2 *2 150 -55 to +150 Unit V V V A A W www.kexin.com.cn 1 SMD Type 2SA1759 Electrical Characteristics Ta = 25 Parameter Collector-emitter breakdown voltage Collector-base breakdown voltae Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Base-emitter saturation voltage DC current transfer ratio Transition frequency Output Capacitance Turn-on time Storage time Fall time Symbol BVCEO BVCBO BVEBO ICBO IEBO IC = -1mA IC = -50 A IE = -50 A VCB = -400V VEB = -6V Testconditons Transistors Min -400 -400 -7 Typ Max Unit V V V -10 -10 -0.2 -0.5 -1.2 82 200 36 0.7 1.8 1 180 ìA ìA V V VCE(sat) IC = -20mA , IB = -2mA VBE(sat) IC = -20mA , IB = -2mA hFE fT Cob ton tstg toff VCE = -10V , IC = -10mA VCE = -10V , IE = 10mA , f = 5MHz VCB = -10V , IE = 0A , f = 1MHz IC = -100mA , RL = 1.5KÙ IB1 = -IB2 = -10mA VCC=-150V MHz pF ìs ìs ìs Marking Marking AHP 2 www.kexin.com.cn