2SA1766

SMD S MD Type PNP Epitaxial Planar Silicon 2SA1766 Transistors IC Features Adoption of FBET, MBIT processes. High DC current gain (hFE=500 to 1200). Large current capacity. Low collector-to-emitter saturation voltage. High VEBO. Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse) Base current Collector dissipation Jumction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Rating -30 -25 -15 -300 -500 -60 1.3 150 -55 to +150 Unit V V V mA mA mA mW Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter cutoff current DC current Gain Gain bandwidth product Common base output capacitance Collector-to-emitter saturation voltage Base-to-emitter saturation voltage Collector-to-base breakdown voltage Collector-to-emitter breakdown voltage Emitter-to-base breakdown voltage Symbol IcBO IEBO hFE fT Cob Testconditons VCB = -20V , IE = 0 VEB = -10V , IC = 0 VCE = -5V , IC = -10mA VCE = -10V , IC = -10mA VCB = -10V , f = 1MHz 500 800 100 12 -0.12 -0.77 -30 -25 -15 -0.5 -1.1 Min Typ Max -0.1 -0.1 1200 MHz pF V V V V V Unit ìA ìA VCE(sat) IC = -200mA , IB =-4mA VBE(sat) IC = -200A , IB =-4mA V(BR)CBO IC = -10ìA , IE = 0 V(BR)CEO IC = -1mA , RBE = V(BR)EBO IE = -10ìA , IC = 0 Marking Marking AL www.kexin.com.cn 1