2SA1773

S MD Type Transistors PNP Epitaxial Planar Silicon Transistor 2SA1773 TO-252 Unit: mm 2.30 +0.8 0.50-0.7 +0.1 -0.1 Features High breadown voltage Large current capacity (IC=2A) +0.2 9.70 -0.2 +0.15 1.50 -0.15 6.50 +0.2 5.30-0.2 +0.15 -0.15 +0.1 0.80-0.1 +0.15 0.50 -0.15 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -0.1 +0.25 2.65 -0.1 +0.15 5.55 -0.15 1 Base 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current (DC) Collector Current (Pulse) Collector Dissipation Tc=25 Junction Tmeperature Storage Temperature Tj Tstg Symbol VCBO VCEO VEBO IC IC Pc Rating -400 -400 -5 -2 -4 1 15 150 -55 to 150 Unit V V V A A W W 3 .8 0 www.kexin.com.cn 1 SMD Type 2SA1773 Electrical Characteristics Ta = 25 Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain* Gain- Bandwidth Product C-E Saturation Voltage B-E Saturation Voltage C-B Breakdown Voltage C-E Breakdown Voltage E-B Breakdown Voltage Output Capacitance Turn-ON Time Symbol ICBO IEBO hFE fT VCE(sat) VBE(sat) V(BR)CBO V(BR)CEO V(BR)EBO Cob ton Testconditons VCB=-300V,IE=0 VEB=-4V,IC=0 VCE=-10V,IC=-100mA VCE=-10V,IC=-50mA IC=-500mA,IB=-50mA IC=-500mA,IB=-50mA IC=-10ìA,IE=0 IC=-1mA,RBE= IE=-10ìA,IC=0 VCB=-30V,f=1MHz -400 -400 -5 40 Min Transistors Typ Max -0.1 -0.1 200 Unit ìA ìA 40 -1.0 -1.0 MHz V V V V V 25 0.12 pF Storage Time tstg 3 ìs Fall Time tf 0.3 hFE Classification Rank hFE C 40 to 80 D 60 to 120 E 100 to 200 2 www.kexin.com.cn