2SA1797

S MD Type Power Transistor 2SA1797 SOT-89 +0.1 4.50-0.1 +0.1 1.80-0.1 Transistors Unit: mm +0.1 1.50-0.1 Low saturation voltage. VCE(sat)=-0.35V(Max.) at IC / IB=-1A/-50mA. +0.1 0.80-0.1 Excellent DC current gain characteristics. Complements the 2SA1797 and 2SC4672. +0.1 0.48-0.1 +0.1 0.53-0.1 +0.1 4.00-0.1 Features +0.1 2.50-0.1 +0.1 0.44-0.1 +0.1 2.60-0.1 +0.1 3.00-0.1 +0.1 0.40-0.1 1. Base 2. Collector 3. Emiitter Absolute Maximum Ratings Ta = 25 Parameter Collector-emitter Voltage Collector-base Voltage Emitter-base Voltage Collector current Collector power dissipation Jumction temperature Storage temperature Symbol VCEO VCBO VEBO IC PC Tj Tstg Rating -50 -50 -6 -3 0.5 150 -55 to +150 Unit V V V A W Electrical Characteristics Ta = 25 Parameter Collector-emitter breakdown voltage Collector-base breakdown voltae Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-Emitter Saturation Voltage DC current transfer ratio Transition frequency Output Capacitance Symbol BVCEO BVCBO BVEBO ICBO IEBO IC = -1mA IC = -50 A IE = -50 A VCB = -50V VEB = -5V Testconditons Min -50 -50 -6 -0.1 -0.1 -0.15 -0.35 82 200 36 270 MHz pF Typ Max Unit V V V ìA ìA V VCE(sat) IC = -1A , IB = -50mA hFE fT Cob VCE = -2V , IC = -0.5A VCE = -2V , IE = 0.5A , f = 100MHz VCB = -10V , IE = 0A , f = 1MHz hFE Classification Marking Rank hFE P 82 180 AG Q 120 270 www.kexin.com.cn 1