2SA1813

SMD S MD Type Transistors IC PNP Epitaxial Planar Silicon Transistors 2SA1813 Features Very small-sized package. Adoption of FBET process. High DC current gain (hFE=500 to 1200). Low collector-to-emitter saturation voltage (VCE(sat) 0.3V). 15V). 1 Emitter 2 Base 3 Collector High VEBO (VEBO Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse) Base current Collector dissipation Jumction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Rating -30 -25 -15 -150 -300 -30 200 150 -55 to +150 Unit V V V mA mA mA mW Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter cutoff current DC current Gain Gain bandwidth product Common base output capacitance Collector-to-emitter saturation voltage Base-to-emitter saturation voltage Collector-to-base breakdown voltage Collector-to-emitter breakdown voltage Emitter-to-base breakdown voltage Symbol IcBO IEBO hFE fT Cob Testconditons VCB = -20V , IE = 0 VEB = -10V , IC = 0 VCE = -5V , IC = -1mA VCE = -10V , IC = -10mA VCB = -10V , f = 1MHz 500 800 210 2.6 -0.15 -0.78 -30 -25 -15 -0.3 -1.1 Min Typ Max -0.1 -0.1 1200 MHz pF mV V V V V Unit ìA ìA VCE(sat) IC = -50mA , IB =-1mA VBE(sat) IC = -50mA , IB =-1mA V(BR)CBO IC = -10ìA , IE = 0 V(BR)CEO V(BR)EBO IC = -1mA , RBE = IE = -10ìA , IC = 0 Marking Marking KS www.kexin.com.cn 1