2SA1815

SMD S MD Type Transistors IC PNP Epitaxial Planar Silicon Transistors 2SA1815 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Unit: mm +0.1 2.4-0.1 High power gain:PG=25dB typ(f=100MHz) High cutoffrequency:fT=750MHz typ Low collector-to-emitter saturation voltage 1 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.1 1.3-0.1 Features 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector dissipation Jumction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating -15 -12 -3 -50 250 150 -55 to +150 Unit V V V mA mW Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter cutoff current DC current Gain Gain bandwidth product Output Capacitance Reverse Transfer Capacitance C-E Saturation Voltage Power Gain Symbol IcBO IEBO hFE Ft Cob Cob VCE(sat) PG Testconditons VCB = -12V , IE = 0 VEB = -2V , IC = 0 VCE = -10V , IC = -5mA VCE = -10V , IC = -5mA VCB=-10V,f=1MHz VCB=-10V,f=1MHz IC=-10mA,IB=-1mA VCE=-10V,IC=-10mA,f=100MHz 60 750 1.2 0.9 -0.1 25 -0.3 1.6 Min Typ Max -0.1 -0.1 270 MHz pF pF V dB Unit ìA ìA hFE Classification Marking Rank hFE 3 60 to 120 JS 4 90 to 180 5 135 to 270 +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1