2SA1832

SMD S MD Type Silicon PNP Epitaxial Type Transistor 2SA1832 Transistors IC SOT-523 +0.1 1.6-0.1 Unit: mm Features High Voltage and High Curren :VCEO=-50V,IC=-150mA(Max.) Excellent hFE Linearity : hFE (IC=-0.1mA/ hFE(IC=-2mA)=0.95(Typ.) High hFE: hFE=70 to 400 2 1.0 +0.05 0.2-0.05 +0.1 -0.1 +0.01 0.1-0.01 1 +0.15 1.6-0.15 0.55 +0.25 0.3-0.05 +0.1 0.5-0.1 0.35 3 1. Base +0.05 0.75-0.05 +0.1 0.8-0.1 2. Emitter 3. Collecter Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Jumction temperature Storage temperature Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating -50 -50 -5 -150 -30 100 125 -55 to +125 Unit V V V mA mA mW Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter cutoff current DC current Gain Collector-emitter saturation voltage Collector Output Capacitance Transition frequency Symbol IcBO IEBO hFE Testconditons VCB = -5V , IE = 0 VEB = -5V , IC = 0 VCE = -6V , IC = -2mA 70 -0.1 4 80 Min Typ Max -0.1 -0.1 400 -0.3 7 V pF MHz Unit A A VCE(sat) IC = -100mA , IB = -10mA Cob fT VCB=-10V,IE=0,f=1MHz VCE=-10V,IC=-1mA hFE Classification Marking Rank hFE 70 SQ Q 140 120 SY Y 240 SG GR 200 400 +0.05 0.8-0.05 www.kexin.com.cn 1