2SA1839

SMD S MD Type Transistors IC PNP Epitaxial Planar Silicon Transistors 2SA1839 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Unit: mm +0.1 2.4-0.1 Very small-sized package permitting 2SA1839-applied sets to be made small and slim Small output capacitance. Low collector-to-emitter saturation voltage Low ON resistance +0.1 1.3-0.1 Features 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse) Base current Collector dissipation Jumction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Rating -15 -10 -5 -100 -200 -20 250 150 -55 to +150 Unit V V V mA mA mA mW Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter cutoff current DC current Gain Gain bandwidth product Common base output capacitance Collector-to-emitter saturation voltage Base-to-emitter saturation voltage Collector-to-base breakdown voltage Collector-to-emitter breakdown voltage Emitter-to-base breakdown voltage ON Resistance Symbol IcBO IEBO hFE fT Cob Testconditons VCB = -12V , IE = 0 VEB = -4V , IC = 0 VCE = -2V , IC = -5mA VCE = -5V , IC = -10mA VCB = -10V , f = 1MHz 200 600 0.9 -0.04 -0.15 -0.82 -15 -10 -15 3.0 -1.1 Min Typ Max -0.1 -0.1 600 MHz pF mV V V V V Ù Unit ìA ìA VCE(sat) IC = -10mA , IB =-1mA VBE(sat) IC = -10mA , IB =-1mA V(BR)CBO IC = -10ìA , IE = 0 V(BR)CEO IC = -1mA , RBE = V(BR)EBO IE = -10ìA , IC = 0 Ron IB=-3mA,f=1MHz Marking Marking LS +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1