2SA1890

S MD Type Silicon PNP Epitaxial Planar 2SA1890 SOT-89 +0.1 4.50-0.1 +0.1 1.80-0.1 Transistors Unit: mm +0.1 1.50-0.1 +0.1 2.50-0.1 +0.1 0.48-0.1 +0.1 0.53-0.1 Features Low collector-emitter saturation voltage VCE(sat) High collector-emitter voltage (Base open) VCEO +0.1 4.00-0.1 +0.1 0.80-0.1 +0.1 0.44-0.1 +0.1 2.60-0.1 +0.1 3.00-0.1 +0.1 0.40-0.1 1. Base 2. Collector 3. Emiitter Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating -50 -50 -5 -50 150 150 -55 to +150 Unit V V V mA mW Electrical Characteristics Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector-base cutoff current Forward current transfer ratio Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance Symbol VCBO VCEO VEBO ICBO hFE Testconditons IC = -10 ìA, IE = 0 IC = -1 mA, IB = 0 IE = -10 ìA, IC = 0 VCB = -40 V, IE = 0 VCE = -2 V, IC = -100 mA 120 -0.2 -0.85 120 15 30 Min -80 -80 -5 -0.1 340 -0.3 -1.2 V V MHz pF Typ Max Unit V V V ìA VCE(sat) IC = -500 mA, IB = -50 mA VBE(sat) IC = -500 mA, IB = -50 mA fT Cob VCB = -10 V, IE = 50 mA, f = 200 MHz VCB = -10 V, IE = 0, f = 1 MHz hFE Classification Marking Rank hFE R 120 240 1Z S 170 340 www.kexin.com.cn 1