2SA1898

SMD S MD Type PNP Epitaxial Planar Silicon 2SA1898 Features Adoption of FBET and MBIT processes. Large current capacity. Low collector-to-emitter saturation voltage. Fast switching speed. Transistors IC Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse) Base current Collector dissipation Jumction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Rating -15 -15 -5 -3 -5 -600 1.3 150 -55 to +150 Unit V V V A A mA W www.kexin.com.cn 1 SMD Type 2SA1898 Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter cutoff current DC current Gain Gain bandwidth product Common base output capacitance Collector-to-emitter saturation voltage Base-to-emitter saturation voltage Collector-to-base breakdown voltage Collector-to-emitter breakdown voltage Emitter-to-base breakdown voltage Turn-on time Symbol IcBO IEBO hFE fT Cob Testconditons VCB = -12V , IE = 0 VEB = -3V , IC = 0 VCE = -2V , IC = -0.5A VCE = -2V , IC = -0.3A VCB = -10V , f = 1MHz Transistors IC Min Typ Max -1 -1 Unit nA nA 100 300 28 -0.25 -0.95 -15 -15 -5 30 280 MHz pF -0.5 -1.2 mV V V V V 60 ns VCE(sat) IC = -1.5A , IB =-75mA VBE(sat) IC = -1.5A , IB =-75mA V(BR)CBO IC = -10ìA , IE = 0 V(BR)CEO IC = -1mA , RBE = V(BR)EBO IE = -10ìA , IC = 0 ton Storage time tstg 100 200 ns Turn-off time toff 120 220 ns hFE Classification Marking Rank hFE R 100 200 AN S 140 280 2 www.kexin.com.cn