2SA1900

SMD S MD Type Medium power transistor 2SA1900 Transistors IC Features Low saturation voltage, typically VCE(sat) = ?0.15V at IC / IB = ?500mA / ?50mA PC=2W (on 40X40X0.7mm ceramic board) Absolute Maximum Ratings Ta = 25 Parameter Collector-emitter Voltage Collector-base Voltage Emitter-base Voltage Collector current Symbol VCEO VCBO VEBO IC Rating -60 -50 -5 -1 -2 Collector power dissipation Jumction temperature Storage temperature *1 Single pulse Pw=20ms, Duty=1/2 *2 When mounted on a 40X40X0.7mm seramic board. PC Tj Tstg 0.5 2 150 -55 to +150 Unit V V V A A(Pulse) *1 W W *2 Electrical Characteristics Ta = 25 Parameter Collector-base breakdown voltae Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-Emitter Saturation Voltage DC current transfer ratio Transition frequency Output Capacitance Symbol BVCBO BVCEO BVEBO ICBO IEBO IC = -50µA IC = -1mA IE = -50µA VCB = -40V VEB = -4V Testconditons Min -60 -50 -5 -0.1 -0.1 -0.4 120 150 20 270 MHz pF Typ Max Unit V V V ìA ìA V VCE(sat) IC/IB = -500mA/-50mA hFE fT Cob VCE/IC = -3V/-0.5A VCE = -5V , IE = 50mA , f=100MHz VCB = -10V , IE = 0A , f=1MHz Marking Marking ALQ www.kexin.com.cn 1