2SA1923

S MD Type Silicon PNP Transistor 2SA1923 TO-252 +0.15 1.50 -0.15 Transistors Unit: mm 2.30 +0.8 0.50-0.7 +0.1 -0.1 Features High Voltage:VCBO=-400V +0.2 9.70 -0.2 6.50 +0.2 5.30-0.2 +0.15 -0.15 +0.1 0.80-0.1 +0.15 0.50 -0.15 IC=-100mA,IB=-10mA 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -0.1 +0.25 2.65 -0.1 +0.15 5.55 -0.15 1 Base 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Tc=25 Junction Temperature Storage Temperature Tj Tstg Symbol VCBO VCEO VEBO IC ICP IB PC Rating -400 -400 -7 -0.5 -1 -0.25 1 10 150 -55 to 150 Unit V V V A A A W W 3 .8 0 Low Saturation Voltage:VCE(sat)=-1V(Max.) www.kexin.com.cn 1 SMD Type 2SA1923 Electrical Characteristics Ta = 25 Parameter Collector Cutoff Current Emitter Cutoff Current Collector-to-Emitter Breakdown Voltage DC Current Gain Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Transition Frequency Collector Output Capacitance Switching Time Turn-on Time Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT Cob ton Testconditons VCB=-400V, IE=0 VEB=-7V, IC=0 IC=-10mA, IB=0 VCE=-5V, IC=-20mA VCE=-5V, IC=-100mA IC=-100mA, IB=-10mA IC=-100mA, IB=-10mA VCE=-5V, IC=-50mA VCB=-10V, f=1MHz,IE=0 -400 140 140 Min Transistors Typ Max -10 -1 Unit ìA ìA V 450 400 -0.4 -0.76 35 18 0.2 -1.0 -0.9 V V MHz pF ìs Switching Time Storage Time tstg 2.3 ìs Switching Time Fall Time tf 0.2 ìs 2 www.kexin.com.cn