2SA1944

SMD S MD Type Silicon PNP Epitaxial 2SA1944 Features High voltage VCEO=-50V Low collector to emitter saturation voltage VCE(sat)=-0.2v typ (@IC=-500mA, IB=-10mA) High hFE: hFE=400 to 800 Small package for mounting Transistors IC Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Emitter-base voltage Collector-emitter voltage Peak collector current Collector current Collector dissipation (Ta=25 ) Jumction temperature Storage temperature Symbol VCBO VEBO VCEO ICM IC PC Tj Tstg Rating -50 -6 -50 -2 -1 500 150 -55 to +150 Unit V V V A A mW Electrical Characteristics Ta = 25 Parameter Colllector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter breakdown voltage Collector cutoff current Emitter cutoff current DC current gain Collector-emitter saturation voltage Gain bandwidth product Collector output capacitance Symbol Testconditons Min -50 -6 -50 -0.1 -0.1 400 -0.2 90 30 800 -0.5 V MHz pF Typ Max Unit V V V ìA ìA V(BR)CBO IC=-10ìA,IE=0 V(BR)EBO IE=-10ìA,IC=0 V(BR)CEO IC=-1mA,RBE= ICBO IEBO hFE VCB=-40V,IE=0 VEB=-2V,IC=0 VCE=-6V,IC=-100mA VCE(sat) IC=-500mA,IB=-10mA fT Cob VCE=-10V,IE=-10mA VCB=-10V,IE=0,f=1MHz Marking Marking XG www.kexin.com.cn 1