2SA1947

SMD S MD Type Silicon PNP Epitaxial 2SA1947 Transistors IC Features High fT: fT=100MHz typ Excellent linearity of DC forward current gain High collector current Icm=-1.5A Small package for mounting Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Emitter-base voltage Collector-emitter voltage Peak collector current Collector current Collector dissipation (Ta=25 ) Jumction temperature Storage temperature Symbol VCBO VEBO VCEO ICM IC PC Tj Tstg Rating -30 -4 -25 -1.5 -1 500 150 -55 to +150 Unit V V V A A mW Electrical Characteristics Ta = 25 Parameter Colllector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter breakdown voltage Collector cutoff current Emitter cutoff current DC current gain Collector-emitter saturation voltage Gain bandwidth product Symbol Testconditons Min -30 -4 -25 -1 -1 55 300 -0.5 100 V MHz Typ Max Unit V V V ìA ìA V(BR)CBO IC=-10ìA,IE=0 V(BR)EBO IE=-10ìA,IC=0 V(BR)CEO IC=-100ìA,RBE= ICBO IEBO hFE VCB=-25V,IE=0 VEB=-2V,IC=0 VCE=-1V,IC=-500mA VCE(sat) IC=-500mA,IB=-25mA fT VCE=-6V,IE=-10mA hFE Classification Marking hFE ABC 55 110 ABD 90 180 ABE 150 300 www.kexin.com.cn 1