2SA1948

S MD Type Silicon PNP Epitaxia 2SA1948 Transistors Features High fT fT=200MHz typ, low Cob Cob=3.5pF typ Small package for mounting High voltage VCEO=120V High collector dissipation Pc=500mW Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating -120 -120 -5 -100 500 150 -55 to +150 Unit V V V mA mW Electrical Characteristics Ta = 25 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Gain band width product Collector output capacitance Symbol Testconditons Min -120 -120 -5 -0.1 -0.1 150 -0.17 200 3.5 800 -0.6 V MHz pF Typ Max Unit V V V ìA ìA V (BR) CBO IC = -10 ìA, IE = 0 V (BR) CEO IC = -1 mA,RBE = V (BR) EBO IE = -10 ìA, IC = 0 ICBO IEBO hFE VCE(sat) fT Cob VCB = -100 V, IE = 0 VEB = -4 V, IC = 0 VCE = -10 V, IC = -10 mA IC = -50 mA, IB = -2.5 mA VCE = -10 V, IE = 10 mA VCB=-10V,IE=0,f=1MHz hFE Classification Marking Rank hFE ACE E 150 300 250 ACF F 500 400 ACG G 800 www.kexin.com.cn 1