2SA1954

SMD S MD Type Silicon PNP Epitaxial 2SA1954 Transistors IC Features Low saturation voltage VCE(sat) (1) = -15 mV (typ.) Large collector current IC = -500 mA (max) 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating -15 -12 -5 -500 -50 100 125 -55 to +125 Unit V V V mA mA mW www.kexin.com.cn 1 SMD Type 2SA1954 Electrical Characteristics Ta = 25 Parameter Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance Collector-emitter on resistance Switching Turn-on time Symbol ICBO IEBO hFE Testconditons VCB = -15 V, IE = 0 VEB = -5 V, IC = 0 VCE = -2 V, IC = -10 mA Transistors IC Min Typ Max -0.1 -0.1 Unit ìA ìA 300 -15 -110 -0.87 80 130 4.2 0.9 40 1000 -30 -250 -1.2 mV mV V MHz pF Ù ns VCE (sat)(1) IC = -10 mA, IB = -0.5 mA VCE (sat)(2) IC = -200 mA, IB = -10 mA VBE (sat) fT Cob Ron ton IC = -200 mA, IB = -10 mA VCE = -2 V, IC = -10 mA VCB = -10V, IE = 0, f = 1 MHz IB = -1mA , Vin = -1Vrms, f = 1KHz Switching Storage time tstg 280 ns Switching Fall time tf IB1 = -IB2 = 5mA 45 ns hFE Classification Marking hFE GA 300 600 GB 500 1000 2 www.kexin.com.cn