2SA1971

S MD Type Silicon PNP Triple Diffused Type 2SA1971 Transistors Features High voltage: VCE = -400 V Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current(pulse) Base current Collector power dissipation Junction temperature Storage temperature range * Mounted on ceramic substrate (250 mm2 X 0.8 t) Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Rating -400 -400 -7 -0.5 -1 -0.25 500 1000 * 150 -55 to +150 Unit V V V A A A mW Electrical Characteristics Ta = 25 Parameter Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance Turn-on time Storage time Fall time Symbol ICBO IEBO Testconditons VCB =-400V, IE=0 VEB=-7V,IC=0 -400 140 140 -0.4 -0.76 35 18 0.2 2.3 0.2 450 400 -1 -0.9 V V MHz pF ìs ìs ìs Min Typ Max -10 -1 Unit ìA ìA V V(BR)CEO IC=-10mA, IB=0 hFE VCE=-5V,IC=-20mA VCE=-5V,IC=-100mA VCE (sat) IC=-100mA,IB=-10mA VBE (sat) IC=-100mA,IB=-10mA fT Cob ton tstg tf VCE=-5V,IC=-50mA VCB=-10V,IE=0,f=1MHz www.kexin.com.cn 1