2SA1977

SMD S MD Type PNP Epitaxial Silicon Transistor 2SA1977 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors IC Unit: mm +0.1 2.4-0.1 High fT :fT = 8.5 GHz TYP. High gain | S21e |2 = 12.0 dB TYP. @f = 1.0 GHz, VCE = -8 V, IC = -20 mA High-speed switching characterstics 1 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.1 1.3-0.1 Features 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PT Tj Tstg Rating -20 -12 -3.0 -50 200 150 -55 to +150 Unit V V V mA mW Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter cutoff current DC current gain Gain Bandwidth Product Collector Capacitance Insertion Power Gain Noise Figure Symbol ICBO IEBO hFE fT Cre* | S21e | NF 2 Testconditons VCB = -10 V VEB = -1 V VCE = -8 V, IC = -20 mA VCE = -8 V, IC = -20 mA, f = 1 GHz VCB = -10 V, IE = 0, f = 1 MHz VCE = -8 V, IC = -20 mA, f = 1.0 GHz VCE = -8 V, IC = -3 mA, f = 1 GHz Min Typ Max -0.1 -0.1 +0.1 0.38-0.1 0-0.1 Unit ìA ìA 20 6.0 8.5 0.5 8.0 12.0 1.5 100 V 1 V MHz 3 pF *.Mesured by a 3-terminal bridge. Emitter and Case should be connected to the guard terminal. hFE Classification Marking Rank hFE T92 FB 20 100 www.kexin.com.cn 1