2SA1978

SMD S MD Type PNP Eitaxial Silicon Transistor 2SA1978 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors IC Unit: mm Features +0.1 2.4-0.1 1 2 +0.1 0.95-0.1 +0.1 1.9-0.1 High-speed switching characterstics 0.55 High gain |S21e|2=10.0dB TYP.@f=1.0GHz,Vce=-10V,Ic=-15mA +0.1 1.3-0.1 High fT (fT=5.5GHz TYP). 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PT Tj Tstg Rating -20 -12 -3.0 -50 200 150 -65 to +150 Unit V V V mA mW Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter cutoff current DC current gain Gain bandwidth product Collector capacitance Insertion Power Gain Noise Figure Symbol ICBO IEBO hFE fT Cre* VCB = -10V VEB = -2V VCE =-10V,Ic=-15mA VCE = -10V ,Ic=-15mA VCB = -10V , IE = 0 , f = 1MHz 8.0 20 4.0 40 5.5 0.5 10.0 2.0 3 1 Testconditons Min Typ Max -10 -10 100 GHz pF dB dB Unit ìA ìA |S21e|2 Vce=-10V,Ic=-15mA,.f=1.0GHZ NF Vce=-10V,Ic=-3mA,.f=1GHZ *.Mesured by a 3-terminal bridge. Emitter and Case should be connected to the guard terminal. hFE Classification Marking Rank hFE T93 FB 20 100 +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1