2SA2058

SMD S MD Type Silicon PNP Epitaxial Type 2SA2058 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors IC Unit: mm +0.1 2.4-0.1 Features High DC current gain: hFE = 200 to 500 (IC = ?0.2 A) Low collector-emitter saturation voltage: VCE (sat) = ?0.19 V (max) High-speed switching: tf = 25 ns (typ.) +0.1 1.3-0.1 1 +0.1 0.95-0.1 +0.1 1.9-0.1 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current (Pulse) Base current Collector power dissipation DC Collector power dissipation t=10s * Jumction temperature Storage temperature Symbol VCBO VCEO VEBO IC Icp IB PC PC Tj Tstg 2 Rating -20 -10 -7 -1.5 -2.5 -150 500 750 150 -55 to +150 Unit V V V A A mA mW mW * Mounted on FR4 board (glass epoxy, 1.6 mm thick, Cu area:645 mm ) +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1 SMD Type 2SA2058 Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter cutoff current Collector-to-emitter breakdown voltage DC current Gain Collector-emitter saturation voltage Base-emitter saturation voltage Collector output capacitance Switching time Rise time Switching time Storage time Switching time Fall time Symbol IcBO IEBO Testconditons VCB = -20V , IE = 0 VEB = -7V , IC = 0 -10 200 125 Min Transistors IC Typ Max -100 -100 Unit nA nA V V(BR)CEO IC =-10mA , IB = 0 hFE VCE = -2V , IC = -0.2A VCE = -2V , IC = -0.6A VCE(sat) IC = -0.6A , IB = -20mA VBE(sat) IC = -0.6A , IB = -20mA Cob ton tstg tf VCC=-6V.,RL=10Ù, -IB1=IB2=-20mA see Figure 1 VCB = -10V , IE = 0, f = 1MHz 500 -019 -1.10 12 50 115 25 V V pF ns ns ns Figure 1: Switching Time Test Circuit & Timing Chart Marking Marking WM 2 www.kexin.com.cn