2SA812

S MD Type PNP Silicon Epitaxial Transistor 2SA812 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Transistors Unit: mm Features +0.1 2.4-0.1 High Voltage: VCEO = -50 V 1 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.1 1.3-0.1 High DC Current Gain: hFE = 200 TYP. (VCE = -6.0 V, IC = -1.0 mA) 2 0.55 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating -60 -50 -5.0 -100 200 150 -55 to +150 Unit V V V mA mW Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter cutoff current DC current gain * Collector saturation voltage Base to emitter voltage Output capacitance Transition frequency * Pulsed: PW 350 s, Duty Cycle 2% Symbol ICBO IEBO hFE Testconditons VCB = -60 V, IE = 0 A VEB = -5.0 V, IC = 0 A VCE = -6.0 V, IC = -1.0 mA 90 200 -0.18 -0.58 -0.62 4.5 180 Min Typ Max -0.1 -0.1 600 -0.3 -0.68 V V pF MHz Unit A A VCE(sat) IC = -100 mA, IB = -10 mA VBE Cob fT VCE = 6.0 V, IC = -1.0 mA VCE = -10 V, IE = 0 A, f = 1.0 MHz VCE = -6.0 V, IE = 10 mA hFE Classification Marking hFE 90 M4 180 M5 135 270 M6 200 400 M7 300 600 +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1 SMD S MD Type 2SA812 Typical Characteristics Transistors Fig.1 Total Power Dissipation vs. Ambient Temperature Fig.2 Collector Current vs. Base to Emitter Voltage Fig.3 Collector Current vs. Collector to Emitter Voltage Fig.4 Collector Current vs. Collector to Emiiter Voltage Fig.5 Base and Collector Saturation Voltage vs. Collector Current Fig.6 DC Current Gain vs. Collector Current 2 www.kexin.com.cn