2SB1000

S MD Type Silicon PNP Epitaxial 2SB1000 Transistors Features Low frequency amplifier. Absolute Maximum Ratings Ta = 25 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current peak collector current Collector power dissipation Junction temperature Storage temperature * PW 10 ms; d 0.02. Symbol VCBO VCEO VEBO IC ICP * PC Tj Tstg Rating -25 -20 -5 -1 -1.5 1 150 -55 to +150 Unit V V V A A W Electrical Characteristics Ta = 25 Parameter Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio * Collector to emitter saturation voltage * Base to emitter saturation voltage * Gain bandwidth product Collector output capacitance Symbol Testconditons Min -25 -20 -5 -0.1 -0.1 85 -0.2 -0.94 200 38 240 -0.3 -1.1 V V MHz pF Typ Max Unit V V V ìA ìA V(BR)CBO IC = -10 ìA, IE = 0 V(BR)CEO IC = -1 mA, RBE = V(BR)EBO IE = -10 ìA, IC = 0 ICBO IEBO hFE VCB = -20 V, IE = 0 VEB = -4 V, IC = 0 VCE = -2 V, IC = -0.5 A VCE(sat) IC = -0.8 A, IB = -0.08 A VBE(sat) IC = -0.8 A, IB = -0.08 A fT Cob VCE = -2 V, IC = -0.15 A VCB = -10 V, IE = 0 f=1MHz hFE Classification Marking hFE AH 85 170 AJ 120 240 www.kexin.com.cn 1