2SB1002

S MD Type Silicon PNP Epitaxial 2SB1002 Transistors Features Low frequency power amplifier Absolute Maximum Ratings Ta = 25 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current peak collector current Collector power dissipation Junction temperature Storage temperature *1. PW 10 ms; d 0.02. Symbol VCBO VCEO VEBO IC ICP *1 PC *2 Tj Tstg Rating -70 -50 -6 -1 -1.5 1 150 -55 to +150 Unit V V V A A W *2. Value on the alumina ceramic board (12.5 X 20 X 0.7 mm) Electrical Characteristics Ta = 25 Parameter Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Gain bandwidth product Collector output capacitance Symbol Testconditons Min -70 -50 -6 -0.1 -0.1 100 320 -0.6 -1.2 150 35 V V MHz pF Typ Max Unit V V V ìA ìA V(BR)CBO IC = -10 ìA, IE = 0 V(BR)CEO IC = -1 mA, RBE = V(BR)EBO IE = -10 ìA, IC = 0 ICBO IEBO hFE VCB = -50V, IE = 0 VEB = -4 V, IC = 0 VCE = -2 V,IC = -0.1 A VCE(sat) IC = -1 A,IB = -0.1 A VBE(sat) IC = -1 A,IB = -0.1 A fT Cob VCE = -2 V,IC = -10 mA VCB = -10 V, IE = 0,f = 1 MHz hFE Classification Marking hFE CH 100 200 CJ 160 320 www.kexin.com.cn 1