2SB1025

S MD Type Silicon PNP Epitaxial 2SB1025 Transistors Features Low frequency power amplifier Absolute Maximum Ratings Ta = 25 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current peak collector current Collector power dissipation Junction temperature Storage temperature *1. PW 10 ms; d 0.02. Symbol VCBO VCEO VEBO IC ICP *1 PC *2 Tj Tstg Rating -120 -80 -5 -1 -2 1 150 -55 to +150 Unit V V V A A W *2. Value on the alumina ceramic board (12.5 × 20 × 0.7 mm) Electrical Characteristics Ta = 25 Parameter Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio Collector to emitter saturation voltage Base to emitter voltage Gain bandwidth product Collector output capacitance Symbol Testconditons Min -120 -80 -5 -10 60 320 -1 -0.9 140 20 V V MHz pF Typ Max Unit V V V ìA V(BR)CBO IC = -10 ìA, IE = 0 V(BR)CEO IC = -1 mA, RBE = V(BR)EBO IE = -10 ìA, IC = 0 ICBO hFE VCB = -100V, IE = 0 VCE = -5 V,IC = -150 mA VCE(sat) IC = -500 mA,IB = -50 mA VBE fT Cob VCE = -5 V,IB = -150 mA VCE = -5 V,IC = -150 mA VCB = -10 V, IE = 0,f = 1 MHz hFE Classification Marking hFE DH 60 120 DJ 100 200 DK 160 320 www.kexin.com.cn 1